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・ Thermal burn
・ Thermal capillary wave
・ Thermal center
・ Thermal comfort
・ Thermal conductance
・ Thermal conductance quantum
・ Thermal conduction
・ Thermal conductivities of the elements (data page)
・ Thermal conductivity
・ Thermal conductivity detector
・ Thermal conductivity measurement
・ Thermal contact
・ Thermal contact conductance
・ Thermal cooking
・ Thermal copier
Thermal copper pillar bump
・ Thermal Credits
・ Thermal cutoff
・ Thermal cycler
・ Thermal de Broglie wavelength
・ Thermal death time
・ Thermal decomposition
・ Thermal degradation of polymers
・ Thermal depolymerization
・ Thermal design power
・ Thermal desorption
・ Thermal desorption spectroscopy
・ Thermal destratification
・ Thermal diffusion
・ Thermal diffusivity


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Thermal copper pillar bump : ウィキペディア英語版
Thermal copper pillar bump
The thermal copper pillar bump, also known as the "thermal bump", is a thermoelectric device made from thin-film thermoelectric material embedded in flip chip interconnects (in particular copper pillar solder bumps) for use in electronics and optoelectronic packaging, including: flip chip packaging of CPU and GPU integrated circuits (chips), laser diodes, and semiconductor optical amplifiers (SOA). Unlike conventional solder bumps that provide an electrical path and a mechanical connection to the package, thermal bumps act as solid-state heat pumps and add thermal management functionality locally on the surface of a chip or to another electrical component. The diameter of a thermal bump is 238 μm and 60 μm high.
The thermal bump uses the thermoelectric effect, which is the direct conversion of temperature differences to electric voltage and vice versa. Simply put, a thermoelectric device creates a voltage when there is a different temperature on each side, or when a voltage is applied to it, it creates a temperature difference. This effect can be used to generate electricity, to measure temperature, to cool objects, or to heat them.
For each bump, thermoelectric cooling (TEC) occurs when a current is passed through the bump. The thermal bump pulls heat from one side of the device and transfers it to the other as current is passed through the material. This is known as the Peltier effect.〔D.M. Rowe, ed. CRC Handbook of Thermoelectrics. Boca Raton, CRC Press, 1994〕 The direction of heating and cooling is determined by the direction of current flow and the sign of the majority electrical carrier in the thermoelectric material. Thermoelectric power generation (TEG) on the other hand occurs when the thermal bump is subjected to a temperature gradient (i.e., the top is hotter than the bottom). In this instance, the device generates current, converting heat into electrical power. This is termed the Seebeck effect.〔
The thermal bump was developed by Nextreme Thermal Solutions as a method for integrating active thermal management functionality at the chip level in the same manner that transistors, resistors and capacitors are integrated in conventional circuit designs today. Nextreme chose the copper pillar bump as an integration strategy due to its widespread acceptance by Intel, Amkor and other industry leaders as the method for connecting microprocessors and other advanced electronics devices to various surfaces during a process referred to as “flip-chip” packaging. The thermal bump can be integrated as a part of the standard flip-chip process (Figure 1) or integrated as discrete devices.
The efficiency of a thermoelectric device is measured by the heat moved (or pumped) divided by the amount of electrical power supplied to move this heat. This ratio is termed the coefficient of performance or COP and is a measured characteristic of a thermoelectric device. The COP is inversely related to the temperature difference that the device produces. As you move a cooling device further away from the heat source, parasitic losses between the cooler and the heat source necessitate additional cooling power: the further the distance between source and cooler, the more cooling is required. For this reason, the cooling of electronic devices is most efficient when it occurs closest to the source of the heat generation.
Use of the thermal bump does not displace system level cooling, which is still needed to move heat out of the system; rather it introduces a fundamentally new methodology for achieving temperature uniformity at the chip and board level. In this manner, overall thermal management of the system becomes more efficient. In addition, while conventional cooling solutions scale with the size of the system (bigger fans for bigger systems, etc.), the thermal bump can scale at the chip level by using more thermal bumps in the overall design.
==A brief history of solder and flip chip/chip scale packaging==
Solder bumping technology (the process of joining a chip to a substrate without shorting using solder) was first conceived and implemented by IBM in the early ‘60s. Three versions of this type of solder joining were developed. The first was to embed copper balls in the solder bumps to provide a positive stand-off. The second solution, developed by Delco Electronics (General Motors) in the late ‘60s, was similar to embedding copper balls except that the design employed a rigid silver bump. The bump provided a positive stand-off and was attached to the substrate by means of solder that was screen-printed onto the substrate. The third solution was to use a screened glass dam near the electrode tips to act as a ‘‘stop-off’’ to prevent the ball solder from flowing down the electrode. By then the Ball Limiting Metallurgy (BLM) with a high-lead (Pb) solder system and a copper ball had proven to work well. Therefore, the ball was simply removed and the solder evaporation process extended to form pure solder bumps that were approximately 125μm high. This system became known as the controlled collapse chip connection (C3 or C4).
Until the mid-90’s, this type of flip-chip assembly was practiced almost exclusively by IBM and Delco. Around this time, Delco sought to commercialize its technology and formed Flip Chip Technologies with Kulicke & Soffa Industries as a partner. At the same time, MCNC (which had developed a plated version of IBM’s C4 process) received funding from DARPA to commercialize its technology. These two organizations, along with APTOS (Advanced Plating Technologies on Silicon), formed the nascent out-sourcing market.
During this same time, companies began to look at reducing or streamlining their packaging, from the earlier multi-chip-on-ceramic packages that IBM had originally developed C4 to support, to what were referred to as Chip Scale Packages (CSP). There were a number of companies developing products in this area. These products could usually be put into one of two camps: either they were scaled down versions of the multi-chip on ceramic package (of which the Tessera package would be one example); or they were the streamlined versions developed by Unitive Electronics, et al. (where the package wiring had been transferred to the chip, and after bumping, they were ready to be placed).
One of the issues with the CSP type of package (which was intended to be soldered directly to an FR4 or flex circuit) was that for high-density interconnects, the soft solder bump provided less of a stand-off as the solder bump diameter and pitch were decreased. Different solutions were employed including one developed by Focus Interconnect Technology (former APTOS engineers), which used a high aspect ratio plated copper post to provide a larger fixed standoff than was possible for a soft solder collapse joint.
Today, flip chip is a well established technology and collapsed soft solder connections are used in the vast majority of assemblies. Interestingly, the copper post stand-off developed for the CSP market has found a home in high-density interconnects for advanced micro-processors and is used today by IBM for its CPU packaging.

抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
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